静电对Si衬底GaN基蓝光LED老化寿命的影响

Influence of ESD on Aging of GaN/Si Blue LEDs

对几组本工程中心研制的S i衬底GaN基蓝光二极管(LED)施加了不同静电击打后,分别在30、50和70mA的驱动电流下进行了老化实验对比,施加静电电压分别为0、100、500和1 000 V。研究对比了1 000 V范围内的静电对S i衬底上GaN基蓝光LED老化寿命的影响,并对相关实验现象进行了分析。结果表明在1000V范围内施加不同的静电对其寿命没有明显的影响。

The current accelerated aging experiments have been performed to GaN/Si blue LEDS after ESD stressed at voltage 0,100,500 ,and 1 000 V respectively. The influence of electrostatic stress on GaN/Si blue LEDS and the comparison of characteristic parameters at different driven current aging have also been researched. The results show that the electrostatics stress has little influence on aging of GaN/Si blue LEDS when the ESD voltage is less 1 000 V.