ESD与方波脉冲对集成电路注入损伤的比较研究

Research on the Comparison of the Damage Effects of Integrated Circuits Injected by ESD and Rectangular Pulse

采用方波脉冲和ESD脉冲对3种集成电路进行了注入损伤效应实验，目的是比较二者对器件损伤的异同之处。分析时，首先对实验数据作拟合分析，建立起相关的数学模型，然后将模型值和实际值进行比较。可得到结论：实验器件有高压强场致PN结击穿和热效应2种损伤模式。对同一种器件，2种注入方式下的损伤模式相同或类似。方波注入下，各损伤阈值参数可拟合为1个式子来描述它们之间的关系，ESD注入下则还不确定；对同一器件，不同注入方式下的阈值不同，目前结果表明相差2～3倍。

Some integrated circuits were injected by rectangular pulse and ESD pulse for comparison of the damage effects caused by the two types of pulses. The results were analyzed by data fitting method and several math models were founded. Some conclusions were given： the failures resulted from junction breakdown and the heat effects on the chip. The failure modes of the same device injected by the two types of pulses are similar. It is more exact that the failure thresholds of the devices which were damaged because of the heat effects were represented by the failure energy. There exits a formula which could be used to explain the relationship of the energy, the failure voltage of the device injected by rectangular pulse and the pulse width, but it is not applied to ESD pulse. For all devices under this test, the failure thresholds under ESD pulses were smaller two or three times than the ones under rectangular pulses.