功率对磁控溅射TbDyFe薄膜磁致伸缩性能的影响

Influence of Sputtering Power on Magnetostrictive Performance of TbDyFe Films Grown by Magnetron Sputtering

采用直流磁控溅射工艺制备TbDyFe磁致伸缩薄膜,通过考察薄膜成分及其微结构,分析研究了溅射功率对薄膜磁致伸缩性能的影响。结果表明,同一薄膜内部成分相当均一,但不同溅射功率条件下的薄膜成分相异。溅射功率较低,薄膜内部微柱状体结构导致了磁各向异性的产生,磁致伸缩性能下降;溅射功率提高到120W,微柱状体结构消失,薄膜内部趋于均一连续,磁致伸缩性能较好。

TbDyFe thin films were grown on silicon substrates by DC magnetron sputtering. The influence of sputtering power on magnetostrictive performance of TbDyFe films was studied by the composition and the microstructure of films. The results show that the composition of films varies with the sputtering powers, which results in the different magnetostrictive performances for different films. At lower sputtering powers, the films exhibit the microstructure of micro-cylinders with magnetic anisotropy from the nearly vertical direction to the substrate surface direction, as a result, the magnetostriction of films is significantly reduced. When sputtering power is up to 120 W, the films become homogeneous without any micro-cylinder, exhibiting good magnetostrictive performances.