三势垒共振隧穿结构中极大增强的光生空穴共振隧穿(英文)

GREATLY ENHANCED RESONANT TUNNELING OF PHOTO-EXCITED HOLES IN A THREE-BARRIER RESONANT TUNNELING STRUCTURE

研究了电子隧穿出射端嵌入1.2μm厚n型弱掺杂GaAs层的三势垒双阱隧穿结构,观察到了隧穿峰谷比高达36的光生空穴共振隧穿峰.研究证实1.2μm厚n型弱掺杂GaAs层在光照下产生的大量光生空穴以及空穴隧穿出射端的23nm宽的量子阱中量子化的空穴能级对空穴隧穿谷电流的限制作用,是导致高峰谷比的光生空穴隧穿现象的主要原因.

By integrating a resonant tunneling diode with a 1.2μm-thick slightly doped n-type GaAs layer in a three-barrier, two-well resonant tunneling structure, the resonant tunneling of photo-excited holes exhibits a value of peak-to-valley current ratio （PVCR） as high as 36. A vast number of photo-excited holes generated in this 1.2p, m-thick slightly doped ntype GaAs layer, and the quantization of hole levels in a 23nm-thick quantum well on the outgoing side of hole tunneling out off the resonant tunneling diode which greatly depressed the valley current of the holes, are thought to be responsible for such greatly enhanced PVCR.