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氧等离子体表面处理对ITO薄膜的影响 被引量：1

Influence of oxygen plasma treatment on indium-tin-oxide films
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摘要 利用原子力显微镜检测ITO薄膜的微观表面形貌以及微观区域电性能,研究氧等离子体处理对ITO薄膜的表面形貌及导电性能的影响,从微观上探讨氧等离子体处理对ITO薄膜的影响.经过氧等离子体处理,ITO薄膜的平均粗糙度从4.6 nm减小到2.5 nm,薄膜的平整度得到提高;但氧等离子体处理之后,ITO薄膜的导电性能大大下降,原因在于ITO薄膜表面被进一步氧化使得ITO薄膜表面的氧空位减少.上述结果从微观上解释了氧等离子体处理能够改善有机发光二极管光电性能的原因. From microcosimic point, the microcosmic morphology and electrical properties of indiumtin-oxide films was investigated with atomic force microscopy to explore the oxygen plasma treatment behaviour. The research results show that the average surface roughness of ITO film decreased from 4.6 nm to 2.5 nm and its conductance decreased greatly after oxygen plasma treatment, which originates from the decrease of oxygen vacancies caused by the further oxidization of indium-tin-oxide. These results explain why the oxygen plasma treatment can improve the performance of organic light-emitting diode.
作者 刘陈 朱光喜 刘德明
机构地区 华中科技大学电子与信息工程系 华中科技大学光电子科学与工程学院
出处 《华中科技大学学报（自然科学版）》 EI CAS CSCD 北大核心 2007年第7期42-44,共3页 Journal of Huazhong University of Science and Technology(Natural Science Edition)
基金 华中科技大学博士后科学基金资助项目(0101181220)
关键词 铟锡氧化物(ITO) 氧等离子体处理 原子力显微镜 有机发光二极管 indium-tin-oxide （ITO） oxygen plasma treatment atomic force microscopy organic light-emitting diode
分类号 TN383 [电子电信—物理电子学]
  • 相关文献

参考文献7

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二级参考文献2

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共引文献14

同被引文献32

  • 1王军,林慧,杨刚,蒋亚东,张有润.直流磁控溅射ITO薄膜的正交试验分析[J].半导体光电,2007,28(1):68-71. 被引量：5
  • 2钟志有.原子力显微镜与X射线光电子能谱对ITO表面改性的研究[J].功能材料,2007,38(8):1247-1250. 被引量：3
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  • 10Haq K, Khan M A, Jiang X Y, et al. Blue organic light-emitting diodes with low driving voltage and maximum enhanced power efficiency based on buffer layer MoO3 [J]. J. Luminescence, 2009, 129: 1158- 1162.

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华中科技大学学报（自然科学版）
2007年 第7期

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