摘要
Using two-step method InP epilayers were grown on GaAs（100） substrates by low-pressure metalorganic chemical vapor deposition （LP-MOCVD）. X-ray diffraction （XRD） and room-temperature （RT） photolu- minescence （PL） were employed to characterize the quality of InP epilayer. The best scheme of growing InP/GaAs（100） heterostructures was obtained by optimizing the initial low-temperature （LT） InP growth conditions, investigating the effects of thermal cycle annealing （TCA） and strained layer superlattice （SLS） on InP epilayers. Compared with annealing, 10-periods Ga0.1In0.9P/InP SLS inserted into InP epilayers can improve the quality of epilayers dramatically, by this means, for 2.6-#m-thick heteroepitaxial InP, the full-widths at half-maximum （FWHMs） of XRD ω and ω-28 scans are 219 and 203 arcsec, respectively, the RT PL spectrum shows the band edge transition of InP, the FWHM is 42 meV. In addition, the successful growth of InP/In0.53Ga0.47As MQWs on GaAs（100） substrates indicates the quality of device demand of InP/GaAs heterostructures.
Using two-step method InP epilayers were grown on GaAs（100） substrates by low-pressure metalorganic chemical vapor deposition （LP-MOCVD）. X-ray diffraction （XRD） and room-temperature （RT） photolu- minescence （PL） were employed to characterize the quality of InP epilayer. The best scheme of growing InP/GaAs（100） heterostructures was obtained by optimizing the initial low-temperature （LT） InP growth conditions, investigating the effects of thermal cycle annealing （TCA） and strained layer superlattice （SLS） on InP epilayers. Compared with annealing, 10-periods Ga0.1In0.9P/InP SLS inserted into InP epilayers can improve the quality of epilayers dramatically, by this means, for 2.6-#m-thick heteroepitaxial InP, the full-widths at half-maximum （FWHMs） of XRD ω and ω-28 scans are 219 and 203 arcsec, respectively, the RT PL spectrum shows the band edge transition of InP, the FWHM is 42 meV. In addition, the successful growth of InP/In0.53Ga0.47As MQWs on GaAs（100） substrates indicates the quality of device demand of InP/GaAs heterostructures.
基金
This work was supported by the National Basic Research Program of China(No.2003CB314901)
the Program for New Century Excellent Talents in University(No.NCET-05-0111)
the National Natural Science Foundation of China(No.60576018).
