摘要
概述了采用电子束辐照制作光波导技术的研究历史,给出电子辐照对S iO2产生作用的机理、样品中原子错位的阈值、电子辐照深度的计算方法,分析了不同能量电子辐照产生折射率变化的原因,给出了低能电子辐照导致S iO2折射率变化的计算及测量方法,介绍了用电子束辐照制作光波导的进展。
The research history on the fabrication of optical waveguide based on electron beam irradiation is reviewed, the mechansm of the effects of electron irradiation upon SiO2 materials, the electron energy threshold values for forming atom displacement in irradiated materials and the computational methods of irradiation depths are introduced. The reasons of refractive indices variations after irradiations with different electron energies are analyzed. The methods of calculation and measurement of the refractive indices variations in SiO2 materials induced by low energy electron irradiations are given. The progress in optical waveguide fabrication based on electron beam irradiation is introduced.
出处
《传感器与微系统》
CSCD
北大核心
2007年第7期4-6,共3页
Transducer and Microsystem Technologies
关键词
电子辐照
光波导
二氧化硅
electron beam irradiation
optical waveguide
silicon dioxide