期刊文献+

Al-Mg-Si合金时效强化初期的价电子理论研究 被引量:4

Valence electronic structure of Al-Mg-Si alloy in initial age strengthening stages
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摘要 为了在电子结构上揭示Al-Mg-Si合金时效强化初期的机理,利用"EET"理论中的键距差法(BLD法),计算了Al-Mg-Si合金中过饱和固溶体相、GP区以及β相的电子结构;解释了Al-Mg-Si合金高温淬火后,过饱和固溶体产生GP区而不是直接产生β稳定相的过程。 To disclose the age strengthening mechanism of Al-Mg-Si alloy in initial stage, the BLD method in EET theory was applied. The valence electronic structure of supersaturated solid solution GP-zone and β stable phase was figured out. So the process why supersaturated solid solution changes into GP-zone but not directly change into β stable phase after elevated temperature was explained.
出处 《兵器材料科学与工程》 CAS CSCD 北大核心 2007年第4期27-30,共4页 Ordnance Material Science and Engineering
基金 国家自然科学基金(NO.50471022)
关键词 AL-MG-SI合金 时效强化 价电子结构 过饱和固溶体 GP区 EET理论 Al-Mg-Si alloy age strengthening valence electronic structure supersaturated solid solution GP-zone EET theory
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参考文献5

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共引文献4

同被引文献30

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