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Intensive irradiation of carbon nanotubes by Si ion beam

Intensive irradiation of carbon nanotubes by Si ion beam
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摘要 Multi-walled carbon nanotubes were irradiated with 40 keV Si ion beam to a dose of 1×1017 cm-2. The multiple-way carbon nanowire junctions and the Si doping in carbon nanowires were realized. Moreover, the forma- tion processes of carbon nanowire junctions and the corresponding mechanism were studied. Multi-walled carbon nanotubes were irradiated with 40 keV Si ion beam to a dose of 1×10^7 cm^-2. The multiple-way carbon nanowire junctions and the Si doping in carbon nanowires were realized. Moreover, the formation processes of carbon nanowire junctions and the corresponding mechanism were studied.
出处 《Nuclear Science and Techniques》 SCIE CAS CSCD 2007年第3期137-140,共4页 核技术(英文)
基金 Supported by the National Natural Science Foundation of China (Grant No.10375085) the Chinese Academy of Sciences Knowledge Innovation Pro-gram (Grant No. KJCX3.SYW.N10).
关键词 碳钠米管 碳钠米金属丝 交叉口 离子束 搀杂 Carbon nanotube, Carbon nanowire, Junction, Ion beam, Doping
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