2Stuchebnikov V M. SOS strain gauge sensors for furce and pressure transducers [ J ]. Sensors and Actuators, 1991 ,A28 ( 3 ) : 207-213.
3Obermeier E. Polysilicon layers lead to a new generation of pressure sensors [A ]. In : IEEE Digest of Technology Papers, International Coference on Solid State Sensors and Actuators[C]. Philadelphia, PA, USA, 1985. 430-433.
4Oknjie R S, Ned A A, Kurtz A D. Operation of 6H-SiC pressure sensor at 500℃ [ J ]. Sensors attd Actuators,1998, A66 (3): 200-204.
5Bruel M. Silicon on insulator material technology [ J]. Electronics Letters, 1995, 31 (14) : 1 201-1 204.
6Izumi K, Doken M, Ariyoshi H. CMOS devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon [ J ]. Electronics Letters, 1978, 14 : 593-597.
7Kanda Y. Piezoresistance effect of silicon [ J]. Sensors and Actuators, 1991, A28 (2): 83-91.
6Hu Changyi,Gao Yiqun,Sheng Zhongyi. The piezoresistance coefficients of copper and copper-nickel alloys[J].Journal of Materials Science,2000.381-386.
7Dirk Werschmoeller,Komel Ehmann,Xiaochun Li. Tool embedded thin film microsensors for monitoring thermal phenomena at tool-workpiece interface during machining[J].Journal of Manufacturing Science and Engineer,2011,(02):1-8.
8Anshuman Guha,Dirk Werschmoeller,Xiaochun Li. Wireless acquisition of temperature data from PCBN embedded thin film sensor[M].Medison:univeistty of Wiconsin Mechison,2010.
9Xuguang Zhang,Xiaochun Li. Design and characterization of thin-film system for microsensors embedding in Ti6Al4V alloys[J].Sensors Journal IEEE,2010,(04):839-846.
