半导体激光照射预防和缓解牙髓炎急性反应

Intervention effect of semiconductor laser on endodontic interappointment emergencies

目的观察半导体激光照射预防及缓解根管治疗急性反应(endodontic interappointment EIAE)的效果。方法选取需进行根管治疗的患有牙髓炎及根尖周炎的牙病患者304例,随机分为2组,在进行根管预备及樟脑酚棉捻开放后,其中1组(155例)应用半导体激光在牙体外辐射根尖区,另1组不作处置,24h后观察记录患者主观症状和体征,比较2组根管治疗急性反应发生率。另选取根管充填后发生急性反应的牙病患者175例,随机分为2组,1组(96例)应用半导体激光在牙体外辐射根尖区;另1组(79例)给予口服甲硝唑及先锋Ⅳ,24h后观察记录患者主观症状和体征,比较2组缓解根管治疗急性反应效果。结果304例牙病患者中,应用半导体激光照射组的急性反应发生率为4.52%,未照射组为10.74%,2组差异有统计学意义(P<0.05);175例根管填充后发生急性反应的患者中,半导体激光照射组的EIAE缓解效果明显好于药物治疗组,2组差异有统计学意义(P<0.05)。结论半导体激光照射可有效预防和缓解根管治疗急性反应。

Objective To analyze the intervention effect of semiconductor laser on endodontic interappointrnent emergencies（EIAE）. Methods 304 teeth which required root canal therapy for apical periodontitis（acute or chronic） or pulp necrosis were randomly divided into 2 groups. In the first group（ n = 155）, the root canals were filled with CP after root canal preparation. And in the other goup（ n = 149）, the apical points outside the teeth were irradiated with semiconductor laser after the root canals were filled with CP. In addition, 175 teeth suffering from EIAE after obturation were investigated and divided into 2 groups. One group（ n = 96） was irradiated by semiconductor laser on the apical points outside the teeth. The patients whose teeth in the other group（ n = 79） were informed to take medicine（Arilin and Cephalosporin）. And 4 hours later, the symptom and clinical examination of all the patients were recorded. Results The rate of 304 EIAE after root canal preparatione was 4.52 % in the group irradiated with semiconductor laser and 10.74 % in the other group（ P 〈 0.05）. The therapy effcct of semiconductor laser was better than that of taking medicine on EIAE（ P 〈 0.05 ）. Conclusion Semiconductor laser can decrease EIAE, and it could be used for the treatment of EIAE.