摘要
报道了InP衬底AlAs/In0.53Ga0.47As/AlAs结构共振隧穿二极管(RTD)的研制过程.衬底片选用(001)半绝缘InP单晶片,结构材料使用分子束外延(MBE)技术制备,并用PL谱对外延片进行测试,器件采用台面结构.测得RTD器件室温下的峰谷电流比(PVCR)为7.4,峰值电流密度(Jp)为1.06×105A/cm-2,是国内首例成功的InP材料体系RTD.
An InP substrate material resonant tunneling diode（RTD） device with a basic structure of AlAs / In0. 53Ga0.47As/AlAs DBSW is reported in the article. Material structure was grown on（001）semi-induction InP substrate by molecular beam epitaxy （MBE） and measured by PL Spectrum. Device is fabricated with mesa technology. DC characteristics for RTD measured at room temperature were Peak-to-valley current ratio（PVCR） is 7. 4, and peak current density （Je） is 1.06×10^5A/cm^-2.
出处
《电子器件》
CAS
2007年第4期1168-1170,共3页
Chinese Journal of Electron Devices
关键词
共振隧穿二极管
分子束外延
台面结构
INP衬底
PL谱
峰谷电流比
resonant tunneling diode
molecular beam epitaxy
mesa structure
InP substrate
PL Spectrum
peak-to-valley current ratio
