SONOS非挥发性存储器件的研究进展

Research Progress of SONOS Nonvolatile Memory Device

随着非挥发性存储器件的尺寸持续缩小,SONOS结构存储器件又重新被重视.简单介绍超短栅长SONOS器件和2bit SONOS器件,重点介绍改进氮化硅层和应用high-K材料,来改善SONOS器件性能的研究.认为只要解决high-K材料在非挥发性存储器件中的应用,具有好的发展前景.

Due to scaling down of nonvolatile memory device, SONOS configuration memory is regarded again. Ultrashort SONOS device and two-bit SONOS device are introduced, and the schemes of changing silicon nitride layer and applying high-K material to improve performance of SONOS device are reviewed. Applying high-K material in nonvolatile memory device should be more promising.