摘要
针对消除传统电荷泵电路存在的MOS开关的电荷注入效应,时钟馈通效应,电荷泄露和充放电电流失配等产生的锁相环的相位偏差问题,设计了两种新型的电荷泵电路.这两种电路的设计和仿真采用了0.6μm CMOS工艺,电源电压为5V,功耗分别为0.65 mW和0.7 mW.仿真结果表明,两种新型电荷泵电路的转换速度得到了提高,输出电压近似于电源电压到地的全摆幅并具有稳定的充放电步长,可用于高速锁相环电路.
Two novel structure of charge-pump circuitry for overcoming the traditional charge-pump's problems of phase-offset in PLL is designed. The circuits design and simulation are based on 0. 6μm CMOS technology, the power supply is 5 V and the power consumptions of two charge-pump are 0. 65 mW and 0. 7 mW. Simulation resuits show that the charge-pump switch speed is increased, the output voltage is close to rail to rail of power supply and charge and discharge step of output voltage is equal and: stable. The circuit has an excellent performance for high-frequency PLL application.
出处
《电子器件》
CAS
2007年第4期1226-1229,共4页
Chinese Journal of Electron Devices
基金
江苏省"六大人才高峰"第二批项目资助项目:"低噪声集成电路电压调节器"
关键词
电荷泵
锁相环
相位偏差
转换速度
charge pump
phase-locked loop
phase-offset
switch speed