摘要
利用一种改进的PIN二极管子电路模型，通过Pspice软件瞬态仿真研究了PIN限幅器的平顶泄漏和高频限幅性能。利用该子电路对新型SiC材料PIN二极管建模仿真，仿真结果表明新型二极管可以提高限幅器的性能。
An improved PIN diode subcircuit model has been developed to study the PIN limiter with Pspice. The limiter＇ s flat leakage and microwave limiting performance have been particularly studied through Pspice simulation. The subcircuit is also used to model a new SiC PIN diode. Simulation resuits indicate that the limiter performance can be greatly, improved by using SiC PIN diodes.
出处
《电子对抗》
2007年第4期28-32,共5页
Electronic Warfare
基金
武器装备预研基金项目（51421-KG0152）
