期刊文献+

Ar气氛中退火对Zn_(0.66)Co_(0.34)O薄膜性能的影响

Effects of annealing at Ar ambient on the physical properties of Zn_(0.66)Co_(0.34)O thin film
下载PDF
导出
摘要 采用电子束反应蒸发生长Zn0.66Co0.34O薄膜,生长温度仅为250℃,尔后在Ar气氛中500℃退火1h。场发射扫描电镜测量显示薄膜由粒径约10~20nm的晶粒所构成。X射线衍射测量表明薄膜在退火前后均呈类ZnO的六方纤锌矿结构。振动样品磁场计测量室温下薄膜的M-H曲线,结果显示退火前薄膜呈超顺磁性,退火后则为铁磁、超顺磁混合态,这表明退火提供了足够能量使得薄膜中一部分磁性Zn0.66Co0.34O小晶粒融合成大晶粒,新晶粒的尺寸超过了Zn0.66Co0.34O材料的超顺磁临界半径而表现出铁磁性,但由于另有部分晶粒仍表现为超顺磁性,故薄膜呈铁磁性与超顺磁性的混合态。 Zn0.66Co0.34O films were grown by reactive e-beam evaporation at 250℃ and then annealed in Ar ambient at 500℃ for 1h.Scanning electron microscope,X-ray diffraction(XRD) and vibrating sample magnetometer(VSM) were employed to characterize the microstructure and magnetic properties of Zn0.66Co0.34O film.XRD measurements revealed that both of as-grown and annealed Zn0.66Co0.34O films are homogeneous with a pure wurtzite structure.Room temperature M-H curves tested by VSM show that the as-grown film is superparamagnetic while the annealed film demonstrates a mixed magnetic characteristics of ferromagnetism and superparamagnetism.Such results suggest that by annealing treatment,some small crystal grains coalesced into relatively larger crystallites,whose sizes exceeded the superparamagnetic critical radius of Zn0.66Co0.34O material and correspondingly showed their ferromagnetic nature.However,probably duo to the fact that other grains still kept superparamagnetic,so the film emerged a mixed magnetic state of superparamagnetism and ferromagnetism.
机构地区 浙江大学物理系
出处 《功能材料》 EI CAS CSCD 北大核心 2007年第7期1089-1092,共4页 Journal of Functional Materials
基金 国家自然科学基金资助项目(50472058)
关键词 Zn0.66Co0.34O薄膜 退火 微结构 磁特性 Zn0.66Co0.34O film annealing microstructure magnetic properties
  • 相关文献

参考文献14

  • 1Ohno H.[J].Science,1998,281:951-956.
  • 2Dietl T,Ohno H,Matsukura M,et al.[J].Science,2000,287:1019-1022.
  • 3Ueda K,Tabata H,Kawai T.[J].Applied Physics Letter,2001,79(7):988-990.
  • 4Park J H,Kim M G,Jang H M,et al.[J].Applied Physics Letter,2004,84(8):1338-1340.
  • 5Kane M H,et al.[J].Journal of Applied Physics,2005,97:023906.
  • 6Ramachandran S,Tiwari A,Narayan J.[J].Applied Physics Letter,2004,84(25):5255-5257.
  • 7Deka S,Joy P A.[J].Solid State Communication,2005,134(10):665-669.
  • 8Kittilstved K R,Gamelin D R.[J].Journal of Applied Physics,2006,99:08M112.
  • 9Hsu H S,Huang J C A.[J].Applied Physics Letter,2006,88:242507-240509.
  • 10余萍,邱东江,樊瑞新,施红军,吴惠桢.Al掺杂ZnO薄膜的微结构及电学特性[J].浙江大学学报(工学版),2006,40(11):1873-1877. 被引量:4

二级参考文献17

  • 1ZHANG Z C,HUANG B B,YU Y Q,et al.Electrical properties and Raman spectra of undoped and Al-doped ZnO thin films by metalorganic vapor phase epitaxy[J].Materials Science and Engineering B,2001,86(2):109-112.
  • 2KATO H,SANO M,MIYAMOTO K,et al.Growth and characterization of Ga-doped ZnO layers on a-plane sapphire substrates grown by molecular beam epitaxy[J].Journal of Crystal Growth,2002,237-239:538-543.
  • 3GUO X L,TATATA H,KAEAI T J.Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source[J].Journal of Crystal Growth,2001,223(1/2):135-139.
  • 4YE Z Z,LU J G,CHEN H H,et al.Preparation and characteristics of p-type ZnO films by DC reactive magnetron sputtering[J].Journal of Crystal Growth,2003,253(1-4):258-264.
  • 5BIAN J M,LI X M,GAO X D,et al.Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis[J].Applied Physics Letters,2004,84(4):541-543.
  • 6SINGH A V,MEHRA R M,WAKAHARA A,et al.p-type conduction in codoped ZnO thin films[J].Journal of Applied Physics,2003,93(1):396-399.
  • 7WANG X H,SHI J L,DAI S G,et al.A sol-gel method to prepare pure and gold colloid doped ZnO films[J].Thin Solid Films,2003,429(1/2):102-107.
  • 8TOMINAGA K,MURAVAMA T,MORA I.Effect of insertion of thin ZnO layer in transparent conductive ZnO:Al film[J].Thin Solid Films,2001,386(2):267-270.
  • 9SAKAGUCHI K,IWASA S,YOSHINO Y.Reduction of residual stress for ZnO:Al thin films on glass substrate prepared by radio frequency magnetron sputtering[J].Vacuum,1998,51(4):677-681.
  • 10RYU Y R,ZHU S,WROBEL J M,et al.Comparative study of textured and epitaxial ZnO films[J].Journal of Crystal Growth,2000,216(1-4):326-329.

共引文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部