摘要
在具有垂直磁各向异性Pt/(Pt/Co)n/FeMn/Pt多层膜中的Co/FeMn界面插入极薄的Pt层时,其交换偏置场有明显提高。研究结果表明:由于在Co/FeMn界面存在界面反应,破坏了(Pt/Co)n多层膜中靠近FeMn层的Co层的垂直磁各向异性,导致垂直交换偏置场Hex减弱。当在(Pt/Co)n与FeMn界面之间插入Pt层时可以有效地阻止这一反应发生,从而提高了多层膜的垂直交换偏置场Hex。
The influence of Pt spacer at the Co/FeMn interface on the perpendicular exchange bias, （Hex）, in the Pt/（Pt/Co） n/FeMn/ Pt multi-layers with perpendicular magnetic anisotropy was experimentally studied. The results show that the Pt spacer at the interface of （ Co）n multilayers and FeMn film,effectively blocks up the interfacial reaction, which severely damages the perpendicular magnetic anisotropy there and decreases the exchange bias decreases. Consequently, the ultra-thin Pt spacer may significantly enhance the exchange bias Hex.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2007年第4期302-304,共3页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金(No.506710008和50471093)
国防基础科研项目(No.A1420060203)
关键词
交换偏置场
垂直磁各向异性
界面反应
Pt插层
Exchange bias field, Perpendicular magnetic anisotropy, Interfacial reaction, Pt spacer
