摘要
本文通过对ＳＯＳ－ＣＭＯＳ门电路４０８２进行不同偏置条件下的电离辐照实验，研究了电离辐照环境中引起ＳＯＳ－ＣＭＯＳ门电路失效的几种重要漏电机制，探讨了ＳＯＳ－ＣＭＯＳ电离辐射损伤的最劣辐照偏置条件。
By making ionizing radiation experiment on SOS/CMOS 4082, we have analysed the principal mechanism of leakage current is SOS CMOS devices induced by irradiation. The worst bias condition of SOS CMOS devices during irradiation is discussed as well. (
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
1997年第3期187-190,共4页
Nuclear Electronics & Detection Technology
