摘要
设计了一种二阶温度补偿带隙基准源,为了提高电源抑制比,设计中采用了与全局电压保持相对无关的局部电压作为带隙核心的工作电压,并且使用PN结串联的结构,以减小运放失调电压的影响。整个电路采用TSMC 0.18μm CMOS工艺实现,使用HSpice仿真器进行仿真,仿真结果证明此基准电压源具有很高的电源电压抑制比和较低的温度系数。
A bandgap reference circuit with 2nd order temperature compensation is presented in the paper. In order to improve the power supply rejection ratio,a partial voltage which is relatively irrelevant to total voltage is used in the bandgap core,and in order to reduce the influence which caused by the offset voltage of operational amplifier, a serial - connected PN junction structure is used in the circuit too. The bandgap reference is implemented in a standard TSMC 0. 18μm CMOS process. Simulation results using HSpice tools show that the circuit has a high Power Supply Rejection Ratio（PSRR）and low temperature coefficient.
出处
《现代电子技术》
2007年第16期190-192,共3页
Modern Electronics Technique
关键词
带隙基准
温度补偿
温度系数
电源抑制
失调电压
bandgap reference
temperature compensation
temperature coefficient, PSR
offset voltage
