A novel coupled quantum well with large negative electro-refractive index change and low absorption loss

In order to solve excessive insertion loss and low on/off ratio in quantum well reflection-type waveguide optical switches, a novel InGaAs/InAlAs coupled quantum well structure is proposed. In the case of low applied electric field （F=19 kV/cm） and low absorption loss （ et ~ 61.2 cm-1）, a large negative field-induced refractive index change （ A n=-0.0134） is obtained in the novel coupled quantum well structure at the operating wavelength （ 2 =1550 rim）. The value is larger by over one to two order of maL, nitude comoared to that in a rectanaular ouantum well （ROW） on the above same work conditions.