高压LDMOS I-V特性宏模型的建立

Creation of the I-V Characteristic Macromodel for High Voltage LDMOS

目前LDMOS已经广泛应用于功率集成电路和微波集成电路中,建立LDMOS的SPICE等效电路变得很重要。以往的模型都是将LDMOS分为线性区和饱和区两段来分析,公式复杂而且计算量大。因此在数值模拟的基础上提出了全导通区域的伏安特性方程,建立了LDMOSI-V特性的宏模型。该模型的特点是参数少,易于提取,得到的SPICE等效电路简单,仿真容易收敛。

Lateral double-diffused MOSFET （LDMOS） is widely used in power integrated circuits and microwave integrated circuits. So creating equivalent circuit of LDMOS is becoming more important. The previous models divided the on-state region of LDMOS into two parts, linear region and saturation region. The formulas and equivalent circuits are very complicated. This paper presents an I-V equation that is available in the whole on-state region by numerical simulation, and creates the I-V Characteristic Macromodel. The model contains fewer parameters easily extracted. Then we obtain a simpler equivalent circuit. Convergence becomes easier when using this equivalent circuit to simulate power integrated circuits.