摘要
利用工艺和器件模拟软件TSUPREM-4和MEDICI,研究了工艺参数对DC-DC转换器中的功率沟槽MOSFET的通态电阻Ron、栅-漏电容Cgd的影响以及栅-漏电荷Qgd在开关过程中的变化,指出了在设计和工艺上减小通态电阻Ron和栅-漏电容Cgd,提高器件综合性能的途径。
This paper has researched the affection of process parameter on the specific on-resistance Rds, on and gatedrain capacitance Cgd of low voltage power trench MOSFET in DC-DC converter by using simulation tools TSUpREM-4 and MEDICI. The affection on the Cgd of MOSFET in switching period has also been researched. Based on this conclusion, the paper indicates the method to reduce the Rds, on and Cgd in design and process manufacture, and the approach to improve the overall performance of device.
出处
《微电子学与计算机》
CSCD
北大核心
2007年第8期157-160,共4页
Microelectronics & Computer
基金
上海市教委资助项目(05AZ79)
