GaP:N液相外延层中杂质对PL谱的影响

INFLUENCE OF THE IMPURITY IN LPE GaP∶N ON PL SPECTRA

借助低温光致发光方法测量了ＧａＰＮ双液相外延材料ＰＬ谱，结果表明：辐射复合效率高的材料ＰＬ谱基本上由孤立Ｎ和ＮＮｉ等束缚激子尖锐峰组成；发光效率较低的ＰＬ谱含有ＤＡ对辐射跃迁的钟形谱上迭加ＮＮｉ峰．分析了谱峰的性质。

The photoluminescence spectra of DLPE GaP:N were measused at low temperature. The results show that the PL spectra of the epilayers with high radiative recombination efficiencies are basically composed of sharp lines due to recombination of excitons bound to the N, and NN i traps, whereas the PL spectra of the epilayers with low efficiencies are bell shaped spectra of donor acceptor pair transitions superimposed with the NN i peaks. The epitaxial growth conditions and their influence on the PL spectra were discussed.