摘要
为了研究波长为２５５．３ｎｍ的铜蒸气激光倍频光在亚微米光刻中的可行性，设计了带宽为１ｎｍ的１１折反射式投影光刻物镜和一个带散射板的光管式均匀照明系统，获得了０．６μｍ的光刻分辨率。此结果表明。
In order to study the feasibility of submicron lithography using second harmonic light of a copper vapor laser(CVL), a 1∶1 catadioptric projection lens, and an illumination system which consists of a rotating diffuser and a ligth pipe, are designed and constructed. A resolution of 0.6 μm line/space patterns is produced in AZ1350 resist. The result shows that the second harmonic light of CVL can be used as an illumination source in submicron lithography.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1997年第1期117-121,共5页
Acta Optica Sinica
基金
国家自然科学基金
关键词
远紫外光刻
亚微米
光刻物镜
铜激光倍频光
DUV lithography, submicron lithography, lithography lens, second harmonic light of CVL, uniform illumination system.
