高纯铝光箔化学成分对直流电侵蚀的影响

Effect of chemical composition in aluminium foil during DC-etching

以Fe、Si、Cu含量不同的四种铝光箔进行直流电侵蚀对比实验,研究了高纯铝光箔中化学成分对其作为电容器用铝箔侵蚀过程产生的影响。通过对侵蚀样品的SEM表面观察、腐蚀形貌定量分析,对光箔中化学成分与样品效果进行了分析讨论。结果表明,Cu能增强表面蚀孔的产生,Cu含量相对较低的(25×10–6)光箔侵蚀后适用于制作中压铝电解电容器;Cu含量相对较高的[(50～60)×10–6]光箔侵蚀后适用于制作高压铝电解电容器。

A parallel DC-etching experiments were carried out through four kinds of aluminium foil with different trace elements content, and the effect of trace elements on A1 etching process was studied. After observing the SEM of products＇ appearance and making quantitative analysis, the relation between trace elements composition in aluminium foil and quality of products was discussed, Experiments indicate that the Cu can increase the pitting number, and aluminium foil with lower Cu element content （ 25 ×10^-6 ） is fit for making medium voltage aluminium electrolyte capacitor; aluminium foil with higher Cu element content [ （ 50-60 ） ×10^-6] is fit for making high voltage aluminium electrolyte capacitor.