基片温度对 Cu-TiC 复合薄膜的影响

Effect of Substrate Temperature on Cu TiC Composite Films

研究了基片温度对Ｃｕ－ＴｉＣ复合薄膜的影响．Ｃｕ－ＴｉＣ复合薄膜采用多靶磁控溅射仪制备．测定了薄膜的显微硬度及电阻率，并利用ＸＲＤ、ＳＥＭ、ＥＤＡＸ和ＴＥＭ研究了薄膜结构．结果表明，随基片温度的提高，Ｃｕ－ＴｉＣ复合薄膜中ＴｉＣ含量增加，Ｃｕ和ＴｉＣ的晶化逐步完善．特别是薄膜的电阻率受基片温度影响显著，当基片温度为３００℃时薄膜的电阻率达到极小值。

Based on the research about the effect of TiC content on the hardness and resistivity of Cu TiC film,the effect of substrate temperature has been studied in this paper.The composite films are deposited by using multi targets magnetron sputtering system,while the microstructure is characterized by means of XRD,SEM,EDAX,and TEM.Then,the microhardness and resistivity are measured.The results show that with the increasing substrate temperature,the TiC contents in composite films expand,and Cu as well as TiC crystallized gradually.The resistivity of films is obviously affected by the substrate temperature and reaches its minimum when the substrate temperature is held at 300℃;meanwhile,the hardness still keeps a higher level.