1.3μm InGaAsP 半导体激光器晶格温升的研究

Research on the Lattice Heating in 1.3 μm InGaAsP Laser Diode

测量了１．３μｍＩｎＧａＡｓＰ半导体激光器自发发射光谱．利用脉冲工作条件下自发发射谱线的微小漂移，对激光器激活区中晶格温升进行了测量分析，得到晶格温升与热平衡时间的关系曲线．

The spontaneous emission spectrum of the 1.3 μm InGaAsP semiconductor laser are measured. The measurement and analysis of the temperature rise in the active region of the laser have been achieved by using a small wavelength shift under pulse operation. The dependencies of temprature rise on the heating equilibrium time at same operation frequncy but diffirent injected current and also at same injected current but diffirent operation frequency have been measured.