摘要
用国产半导体激光二极管抽运Nd∶GdVO4晶体,在室温下获得912nm激光连续输出,用I类临界位相匹配LBO内腔倍频获得456nm深蓝光激光输出,当注入抽运功率为1.8W时,深蓝光最大输出为53mW,光-光转化效率为2.9%,功率稳定度24h内优于±2.3%。
An optimized designed CW 912nm laser at room temperature is obtained. Using type-I critical-matching LBO crystal, 456nm deep blue laser is obtained by 912nm intracavity frequency doubling. The maximum laser output power of 53mW is obtained when incident pump laser of 1.8W is used. The optical-to-optical conversion up to 2.9%, the power instability in 24h is better than ±2.3%.
出处
《激光与红外》
CAS
CSCD
北大核心
2007年第8期719-721,共3页
Laser & Infrared
基金
国防科工委国防基础科研项目(No:A3620060122)
