摘要
The storage characteristics of nano-crystal Si （NC-Si） devices,especially for MOS capacitors,are studied by cross sectional transmission electron microscopy （TEM） and capacitance-voltage （C-V） measurement under different conditions,including programming and erasing at different temperatures and gate voltages,as well as using ＋/-bias-temperature （BT） measurements.Physical mechanisms such as carrier trapping,interface state filling,and temperature related deterioration are revealed.The experimental results demonstrate that the degradation of the program window and threshold voltage （VT） shift at high temperature,large voltage sweep range,and bias applied to sweep voltage is strongly related to the type of majority carriers.
对纳米晶器件,尤其是MOS电容进行了横截面TEM分析和不同条件下的电学特性(C-V特性)测量,包括+/ -BT分析.揭示了系统的纳米晶存储物理机制,例如电荷俘获、界面态填充和温度特性.研究结果表明,高温、大电压摆幅和偏置情况下,器件编程窗口的恶化和阈值电压的漂移与多数载流子的种类有关.
基金
国家重点基础研究发展规划资助项目(批准号:2006CB302702)~~
