摘要
Zinc nitride （Zn3N2） thin films were prepared by radio frequency （RF） magnetron sputtering on quartz glass at different substrate temperatures.The structure and composition were characterized by X-ray diffraction and Raman-scattering measurements,respectively.The polycrystalline phase Zn3N2 films appeared when the ratio of the N2 partial pressure to the total pressure reached 1/2.The effects of the substrate temperature on the electrical and optical properties of the Zn3N2 films were investigated by Hall measurements and optical transmission spectra.The electrical and optical properties of the films were highly dependent on the substrate temperature.With the substrate temperature increasing from 100 to 300℃,the resistivity of the Zn3N2 films decreased from 0.49 to 0.023Ω·cm,the carrier concentration increased from 2.7×10^16 to 8.2×10^19cm^-3,and the electron mobility decreased from 115 to 32cm^2/（V·s）.The deposited Zn3N2 films were considered to be n-type semiconductors with a direct optical band gap,which was around 1.23eV when the substrate temperature was 200℃.
采用射频磁控溅射法在不同衬底温度和不同氮气分压下在石英玻璃衬底上制备氮化锌薄膜.利用XRD和喇曼散射仪分析了样品的晶体结构和组成.结果表明当氮气分压为1/2时可以生成多晶单一相的氮化锌薄膜.利用霍尔效应和光学透过谱测量了样品的电学和光学性质.结果表明衬底温度对样品的电学和光学性质有很大的影响.衬底温度从100℃上升到300℃时,样品的电阻率从0.49降低到0.023Ω.cm.电子浓度从2.7×1016升高到8.2×1019cm-3.在衬底温度为200℃,氮气分压为1/2时,样品的光学带隙为1.23eV.
基金
广东省自然科学基金(批准号:31927)
广东省教育厅自然科学基金(批准号:粤财教[2006]112号)资助项目~~
