摘要
用分子束外延方法在(001)GaAs衬底上生长了AlAs/InGaAs双势垒量子阱薄膜结构.介绍了量子阱薄膜在(110)与(110)方向单轴压应力作用下的力电耦合实验,测试出量子阱薄膜在室温下随着外加压力变化的I-V曲线.测试结果表明:量子阱薄膜I-V曲线的共振峰在(110)方向单轴应力作用下向正偏压方向漂移,在(110)方向应力作用下向负偏压方向偏移,并分析了量子阱薄膜力电耦合效应的物理成因.该结果与基于量子阱力电耦合特性的介观压阻理论的研究结果相吻合.
An AIAs/GaAs superlattice quantum well membrane is grown by MBE on （001）-oriented GaAs substrates. A mechanical-electrical coupling experiment on this membrane under （110） and （11^-0） uniaxial pressure is conducted,and the pressure-dependent current-voltage characteristics are tested. Under （110） stress, the resonance peaks shift to more positive voltages,while under （11^-0） stress, the peaks shift toward more negative voltages. The mechanism that induces this phenomenon is discussed. The result agrees well with that of the Meso-piezoresistive theory.
基金
国家自然科学基金资助项目(批准号:50375050)~~
关键词
纳机电器件
力电耦合
单轴压力
双势垒量子阱
nano electro-mechanical system
mechanical-electrical coupling
uniaxial pressure
double-barrier quantum well
