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LMBE法生长Mg_(0.2)Zn_(0.8)O及MSM型紫外探测器的制备

MSM Ultraviolet Photodetector of Mg_(0.2)Zn_(0.8)O by LMBE
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摘要 采用激光分子束外延(LMBE)方法在蓝宝石(0001)面生长了高质量的Mg0.2Zn0.8O薄膜,并对薄膜在空气中900℃进行了1h的退火处理,然后采用剥离方法在薄膜表面制作了Al叉指电极,制备出MSM型Mg0.2Zn0.8O光电导紫外探测器.对响应时间的测试表明,探测器的上升时间仅为14.3ns,下降时间为6.5μs. Mg0.2Zn0.8O films were deposited on the c-plane of sapphire by LMBE with two different structures. The films were all annealed in air at 900℃ for lh. Then interdigital Al electrodes were evaporated on the films using the standard liftoff technique. A Mg0.2 Zn0.8O ultraviolet photodetector was obtained,with a fast rise time of 14.3ns and fall time of 6.5μs.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第8期1242-1247,共6页 半导体学报(英文版)
基金 教育部博士点基金(批准号:20030698008) 河南省杰出人才创新基金(批准号:0421001500)资助项目~~
关键词 Mg0.2Zn0.8O薄膜 紫外探测器 响应时间 Mg0. 2 Zn0. 8 O film ultraviolet photodetector response time
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参考文献10

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