摘要
提出了适用于电路模拟的4H-SiCn-MOSFET高温沟道电子迁移率模型.在新模型中,引入了横向有效电场和表面粗糙散射的温度依赖性,电子饱和漂移速度与横向有效电场和温度的关系,以及改进的界面陷阱电荷和固定氧化物电荷库仑散射模型等因素.采用与温度-阈值电压实验曲线拟合的方法,确定了界面态参数和固定氧化物电荷.基于新迁移率模型的模拟结果与实验吻合.
An improved temperature-dependent 4H-SiC MOSFET channel-electron mobility model for circuit simulation is established. Some factors are introduced, including the effects of temperature on transverse effective electric field and surface roughness scattering, the dependence of the saturation drift velocity of the electron on transverse effective electric field and temperature, and an improved interface trapped charge and fixed oxide charge coulomb scattering model. In addition, the interface state parameters and fixed oxide charge density are extracted by simulation with the experimental temperaturethreshold voltage curve. The simulated output characteristic curves with this model agree with experimental results.
