期刊文献+

一种带有软启动的精密CMOS带隙基准设计

Design of High Precision CMOS Bandgap Voltage Reference with Soft-start up Circuit
下载PDF
导出
摘要 提出了一种新颖的带有软启动的高精密CMOS带隙基准电压源。采用UMC的0.6μm2P2M标准CMOS工艺进行设计和仿真,HSPICE模拟表明该电路具有较高的精度和稳定性,带隙基准的输出电压为1.293 V,在1.5 V^4 V电源电压范围内基准随输入电压的最大偏移为0.27 mV,基准的最大静态电流约为19μA;在-40℃~120℃温度范围内,基准随温度的变化约为4.41 mV,产生的偏置电流基本上不受电源电压的影响,而与温度成线性关系;在电源电压为3 V时,基准的总电流约为14.25μA,功耗约为42.74μW;并且基准具有较高的电源抑制比和较低的噪声(小于500 nV/Hz1/2),基准的输出启动时间约为25μs。 This paper proposes a novel high precision CMOS bandgap voltage reference which with a softstart up circuit. Using 0.6 μm 2P2M standard CMOS process of UMC this bandgap voltage reference was designed and simulated, HSPICE simulation results show that this circuit has higher precision and stability, the output of the bandgap voltage is 1. 293 V, the greastest skew of reference voltage to input voltage is 0.27 mV in the power supply range from 1.5 V to 4 V, the maximum static current of reference is 19 μA;the greatest skew of reference voltage to temperature is about 4.41 mV in the range of - 40 ℃ - 120 ℃ , the reference current is hardly influenced by the power supply voltage, which is in line with temperature;the total current of the bandgap reference is about 14.25 μA with the power dissipation is about 42.74 μW at 3 V power supply, this bandgap reference also has higher PSRR and lower noise( smaller than 500 nV/Hz^1/2) , and the start up time of output is about 25 μs.
出处 《电子工程师》 2007年第8期28-31,共4页 Electronic Engineer
基金 西安-美国应用材料创新基金(ZK05097-XA-AM-200514) 陕西省科技攻关项目(2004K05-G11)
关键词 CMOS 带隙基准 软启动电路 温度补偿 电源抑制比 CMOS bandgap voltage reference soft-start up circuit temperature compensation PSRR
  • 相关文献

参考文献8

  • 1ALLEN P E,HOLBERG D R.CMOS analog circuit design[M].Oxford,UK:Oxford University Press,2002:153-157.
  • 2RAZAVI B.Design of analog CMOS integrated circuit[M].New York,NY,USA:McGraw-Hill,2001:384-390.
  • 3NAGARA K.Band gap voltage reference generator[P].USP 5512817,2001.
  • 4YE Xiaobin,CHEN Zhiliang.Low voltage self-biasing reference circuits[C]//Proceedings of 4th International Conference on ASIC.Oct 22-25,2001,Shanghai,China.2001:314-317.
  • 5LUAN V.Low noise high PSRR band-gap with fast turn-on time[P].USP 6278320,2001.
  • 6TSIVIDIS Y.Accurate analysis of temperature effects in Ic-Vbe,Characteristics with application to bandgap reference Sources.IEEE Journal of Solid State Circuits,1980,15 (6):1076-1084.
  • 7ANNEMA A J.Low power bandgap references featuring DTMOST's.IEEE Journal of Solid State Circuits,1999,34(7):949-955.
  • 8朱樟明,杨银堂.一种10-ppm/~oC低压CMOS带隙电压基准源设计[J].电路与系统学报,2004,9(4):118-120. 被引量:21

二级参考文献4

  • 1Tesch B J, Pratt P M, et al. 14-b 125 MSPS Digital-to-Analog Converter and Bandgap Voltage Reference in 0.5um CMOS [A]. Proc. Of the IEEE 1999 ISCAA'99 [C]. Orlando, FL, USA., 1998-06: 452-455.
  • 2Banba H, Siga H, Umezawa A, Miyaba T. A CMOS Bandgap Reference with Sub-1-V Operation [J]. IEEE Journal of Solid-State Circuits, 1999, 34(5): 670-674.
  • 3Boni Andrea. Op-Amps and Startup Circuits for CMOS Bandgap References With Near 1-V Supply [J]. IEEE Journal of Solid-State Circuits, 2002, 37(10): 1339-1342.
  • 4何捷,朱臻,王涛,李梦雄,洪志良.一种具有温度补偿、高电源抑制比的带隙基准源[J].复旦学报(自然科学版),2001,40(1):86-90. 被引量:26

共引文献20

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部