摘要
根据MBE实际生长条件,采用在应变Si1-xGex/SiMQW结构中同应变相关的Ge的扩散系数,用生长过程的移动边界条件,求解了Ge在Si1-xGex/SiMQW中的扩散方程,模拟出了MQW的畸变,指出了这种畸变具有固定的不对称性,并分析了不同生长温度、应变及阱宽情况下MQW的畸变.
The profile of Ge in Si1-xGex/Si MQW grown by MBE is emulated by solvingthe diffusion equation under moving boundary condition simulating the growing process.Some profiles under different growth-temperature, strains and well-width are given anddiscussed. The given profiles with unsymmetry clearly show that the structures of SiGe/Si MQW are distorted by the diffusion of Ge during the growing process.