摘要
本文首次报道了一种新颖的重掺硅中间隙氧含量测量技术，通过硅片减薄并采用低温红外透射测量，明显降低了重掺硅自由载流子吸收的严重干扰，提高了红外吸收峰信噪比，在1136cm－1附近得到了明显的Si－O键红外吸收峰，从而可以准确地测量重掺硅间隙氧含量．实验结果表明：该测量方法具有很高的测量准确度和更宽泛的电阻率应用范围．对于重掺n型硅，其测量应用范围可扩展至电阻率1×10-2Ω·cm（自由载流子浓度高达4×1018cm－3）．
A new technique is reported for rapid determination of interstitial oxygen(Oi) inheavily Sb-doped CZ silicon. This technique includes the application of wafer thinning andlow temperature (10K) FTIR transmittance to measure Si-O infrared absorption bandaround 1136cm-1. Mechanical wafer thinning combined with 10w temperature FTIR canmarkedly reduce the frequency-independent absorption by excess free carriers and increase the intensity of transmitted light. As a result, a high signal-to-noise ratio for Oi infrared absorption band is attained. Our results show that this method has a high reliabilityof measurement and can.be used at resistivity down to 0. 01Ω· cm for n-type heavily Sbdoped (up to 4×1018cm-3) silicon.
关键词
半导体
硅
间隙氧含量
红外吸收
重掺硅
Infrared radiation
Low temperature operations
Semiconductor doping
Signal to noise ratio
Thin films
