红外区熔再结晶SOI GE_XSi_(1-X)合金沟道P-MOSFET的研究

Study of Infrared Zone-Melting-Recrystallization(ZMR) SOI Ge_xSi_(1-x)Alloy Channel P-MOSFET's

在红外区熔再结晶SOI材料上用MBE的方法形成Si／GexSi1－x／Si量子阱结构．在此基础上，采用常规的P－MOS工艺制造出了SOIGexSi1-x合金沟道P－MOSFET．为避免GexSi1-x合金材料发生蜕化，MBE以后除快速热退火（RTA）以外的所有工艺温度都不超过800℃．直流特性的测量结果表明，与普通Si沟道器件相比，GexSi1-x合金沟道器件的沟道载流子迁移率有所提高．而且，这种器件在性能的进一步提高方面存在着相当大的潜力．

Si/GexSi1-x/Si quantum well structure was formed on the infrared Zone-Melt-ing-Recrystallization(ZMR) SOI material by using MBE technique. On the basis of this,SOI GexSi1-x alloy channel P-MOSFET's were fabricated by using conventional P-MOSprocess. In order to avoid degradation of GexSi1-x alloy layer,temprature was controllednot above 800℃ during the processing steps after MBE except Rapid Thermal Annealing(RTA). The transconductance and channel mobility of SOl GexSi1-x alloy channel P-MOS-FET have been found to be higher than those of an identically processed conventional Sichannel device according to measurements of I-V characteristics. Moreover,this kind ofdevice has great potentialities in further improvement on performance.