摘要
文章介绍了32×32元长波碲镉汞混成焦平面器件研制及室温目标红外热成像演示。该器件采用MBE碲镉汞薄膜材料、全平面离子注入成结工艺、Si-CMOS读出电路、倒焊互联混成、背照工作模式。所研制的32×32元碲镉汞长波焦平面器件获得了突破性进展,最新结果为Dλ*>1×1010cmHz1/2W-1,响应率不均匀性为12.4%,有效像元>98%,NETD约为0.1K(FOV=60°),响应波长8~10μm。该器件实现了室温目标红外热成像。该项工作处于国内领先水平。在研制过程中解决了一系列关键问题,为研制更大规模的红外焦平面器件奠定了坚实的技术基础。
In this paper the development of MCT hybird-FPA device and the demonstration of thermal IR image of target at room temperature for 32 ×32 elements in range of long wavelength are introduced. The device adopts MBE MCT thin film material, pan-planar ion implantation process which forms P-N junction, Si-CMOS readout circuit, hybird flip chip bonding interconnection and backside-illumination mode. Some breadthrough have been achieved with the results up-to-date as follows: Response non-uniformity is 12. 4 %, response wavelength 8 ~ 10μm, NETD about 0. 1K (FOV= 60°), Dλ* more than 1 ×1010cmHz1/2W-1 and valid elements more than 98 %. The study work has resolved a series of crucial technical problem and had the leading position in China.
出处
《红外与激光工程》
EI
CSCD
1997年第3期27-30,共4页
Infrared and Laser Engineering