摘要
研制了在平面ＰＮ结内无敏感区的硅光电探测器，测量了这种新结构器件的光电转换特性，说明在一定的均匀光照下，器件的光电流也有一定的值。利用本文的分析模型，可以得到该器件的有效光敏面积，从而可以确定衬底材料中光生少子的扩散长度。
Using the reflectivity states of SiO 2 Si system in air, the influence of thickness of SiO 2 layer and wavelength of light to reflectivity is discussed.It is proposed that how to determine the thickness of SiO 2 layer in two cases:(1)Minimize reflectivity in some range of wavelength; (2)maximize photoelectric current at some light condition.
