摘要
无坩埚区熔法生长的无位错硅单晶中微缺陷形成的特征Э．С．法勒克维奇И．Ф．切沃勒（乌克兰国立扎波罗热大学）无位错硅单晶晶体结构的完美程度，即它们体内的宏观和微观缺陷的存在，乃是目前评定硅单晶质量的主要参数之一。结构缺陷的特征、浓度及分布限定了硅单晶的...
The article expounds the general situation of Vertical Conduction Double Scattering Metal Oxide Semiconductor,analyses its structure feature、working principle、special property curve and main parameter,sums up its technology feature and superiority,at last introduces the application in the field of electric power electron technology、computer and sound.
关键词
硅单晶
无位钳
无坩埚区熔法
微缺陷
Vertical conduction Double scatter Field effect transister
