分子束外延GaAs/AlGaAs超晶格缓冲层量子阱材料的研究

Investigation on a YAG laser with CPM Self filtering Unstable Resonator

采用分子束外延技术（ＭＢＥ）生长了ＧａＡｓ／ＡｌＧａＡｓ单量子阱和多量子阱材料。采用ＧａＡｓ／Ａｌ－ＧａＡｓ超晶格缓冲层掩埋衬底缺陷，获得的量子阱结构材料被成功地用于制作量子阱激光器。波长为７７８ｎｍ的激光器，最低阈值电流为３０ｍＡ，室温下线性光功率大于２０ｍＷ。

Applying self filtering unstable resonator with an antiresonant ring and a convex mirror to a colliding pulse mode locking Nd:YAG laser, we improved the spatial quality of light beam and output stability and obtained the mode locked trains of 50 mj energy and 10 ps pulse duration with times diffraction limit divergence. Meantime, we compared experimentally the properties of two CPM unstable resonators with a filtering aperture and without it.