摘要
碳化硅(SiC)是一种宽禁带半导体材料,适用于制作高压、高功率和高温器件,并可以工作在直流到微波频率范围。阐述了SiC材料的性质,详细介绍了SiC器件工艺(掺杂、刻蚀、氧化及金属半导体接触)的最新进展,并指出了存在的问题及发展趋势。
SiC is a kind of wide-band semiconductor material that is suitable for producing high voltage, high power and high temperature devics. SiC devices could overate with in the range from de to microwave. In this paper, the property of SiC is presented and the resent evolution of the SiC device process is introduced in detail, including doping, etching, oxidation and metal- semiconductor contact. The problems that still exist by now are pointed out and the development tendency is discussed.
出处
《电子产品可靠性与环境试验》
2007年第4期58-62,共5页
Electronic Product Reliability and Environmental Testing
