高度(002)择优取向Li^+掺杂ZnO薄膜的制备和性能

Preparation and properties of high (002) orientation ZnO-Li^+ films

制备了不同摩尔浓度Li^+掺杂ZnO-Li_(0.022)陶瓷靶、并用RF射频磁控溅射工艺在Si(100)基片上制备ZnO薄膜,研究了溅射温度、氧分压和溅射功率等对ZnO薄膜微结构、表面形貌和择优取向的影响.结果表明:Li^+的最佳掺杂量(摩尔分数)为2.2%,RF溅射的最佳基片温度T_s小于300℃,氩氧气氛体积比为Ar:O_2=20:5,溅射功率50～60W;制备出的ZnO薄膜高度c轴(002)择优取向、均匀、致密,其绝缘电阻率ρ为4.12×10~8Ω·cm,满足研制声表面波器件(SAW)的要求.

The different concentration of Li^＋ doped in ZnO ceramic target was fabricated, and ZnO films were grown on Si （100） substrate by using RF magnetrorl sputtering technique. The effects of deposition temperature, oxygen partial pressure and RF sputtering power on the microstructure, surface morphology and preferred orientation of ZnO films were investigated. The results show that the optimum concentration （mol fraction） of Li^＋ doped in ZnO ceramic target is 2.2%, and the optimum sputtering temperature is 300℃, ambient volume rate is Ar：O2=20：5, RF sputtering power is S0~60 W. The ZnO films with high c-axis orientation, homogeneous, dense and insulative resistivity of 4.12×10^7Ω·cm were obtained, which completely meet the requirement of surface acoustic wave （SAW） application.