摘要
集成电路产业在遵循摩尔定律发展进入纳米时代后,制造工艺效应对芯片电学性能的影响越来越大,使得在设计的各个阶段都必须考虑可制造性因素。介绍了可制造性设计中的分辨率增强技术、工艺可变性,以及建立可制造性设计机制中的多方合作问题。
As IC industry develops into a nanometer era, effects of process technology on electrical performance of IC chips are becoming more and more serious. Factors of manufacturabillty have to be taken into account at every step during IC design. Issues concerning design for manufacturabillty （DFM） were dealt with, including resolution enhancement techniques （RET）, process variation and the multilateral cooperation for establishing DFM mechanism.
出处
《微电子学》
CAS
CSCD
北大核心
2007年第4期532-537,共6页
Microelectronics
关键词
集成电路
可制造性设计
分辨率增强
工艺可变性
光学邻近校正
化学机械抛光
Integrated circuit
Design for manufacturability
Resolution enhancement technique
Process variation
Optical proximity correction
Chemlcal-mechanical polishing
