摘要
介绍了几种互补双极工艺的结构和特点,详细阐述了一种基于N型外延的PN结隔离互补双极工艺;着重探讨了隔离制作技术和PNP管设计要点,并对实际流片结果进行了讨论。
A number of complementary bipolar process technologies are introduced, together with their features and advantages. A p-n junction isolated complementary bipolar technology based on N-type epitaxial wafers is described in detail. Essentials of the isolation control and PNP transistor design are investigated in particular. And finally, discussions are made on results from processed wafers.
出处
《微电子学》
CAS
CSCD
北大核心
2007年第4期548-552,共5页
Microelectronics
关键词
互补双极工艺
隔离技术
PNP晶体管
高速放大器
Complementary bipolar process
Isolations PNP transistor
High speed amplifier