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一种PN结隔离互补双极工艺 被引量:3

Complementary Bipolar Process Based on P-N Junction Isolation
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摘要 介绍了几种互补双极工艺的结构和特点,详细阐述了一种基于N型外延的PN结隔离互补双极工艺;着重探讨了隔离制作技术和PNP管设计要点,并对实际流片结果进行了讨论。 A number of complementary bipolar process technologies are introduced, together with their features and advantages. A p-n junction isolated complementary bipolar technology based on N-type epitaxial wafers is described in detail. Essentials of the isolation control and PNP transistor design are investigated in particular. And finally, discussions are made on results from processed wafers.
出处 《微电子学》 CAS CSCD 北大核心 2007年第4期548-552,共5页 Microelectronics
关键词 互补双极工艺 隔离技术 PNP晶体管 高速放大器 Complementary bipolar process Isolations PNP transistor High speed amplifier
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参考文献2

  • 1BASHIR R,HEBERT F.A complementary bipolar technology family with a vertically integrated PNP for high-frequency[J].IEEE Trans Elec Dev,2001,48(11):2525-2534.
  • 2JOHNS D A,MARTIN K.模拟集成电路设计[M].曾朝阳,赵阳,等译.北京:机械工业出版社,2005,223-224.

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