期刊文献+

电化学C-V法对载流子浓度纵向分布的精确测量

Accurate Measurement of Vertical Distribution of Carriers Concentration by Electrochemical Capacitance-Voltage
下载PDF
导出
摘要 电化学C-V法是当前测量化合物半导体载流子浓度纵向分布的非常重要的方法。用电化学C-V测试仪对外高内低、有较大浓度梯度的外延样品进行载流子浓度纵向分布测量时发现,内层低载流子浓度区域测试结果误差较大,主要是由测试系统引起的,由此提出了一种对结果的修正算法。通过对MBE制作专用样品测量证实,用该方法可得到数据准确可靠的测试结果。 Electrochemical capacitance-voltage (ECV) profiler is the most convenient method to characterize the vertical distribution of carriers concentration of compound semiconductor. It was found that the carrier concentration error in inner layer was great when the sample was measured by ECV, whose carrier concentration in the outer layer was bigger than that in inner layer with large concentration grad. It was observed that the error mainly caused by the testing system, on the basis of which a modified algorithm was presented. The validity of this modified algorithm was confirmed by the tested results of special samples grown by MBE, measurement results can be achieved reliably.
出处 《半导体技术》 CAS CSCD 北大核心 2007年第9期809-811,共3页 Semiconductor Technology
基金 装备预研基金项目(9140A12030506DZ23) 国防基础科研项目(D1120060468)
关键词 电化学-CV法 载流子浓度 误差分析 修正算法 ECV concentration of carrier error analysis modified algorithm
  • 相关文献

参考文献5

  • 1李晓云,牛萍娟,郭维廉.电化学C-V法测量化合物半导体载流子浓度的研究进展[J].微纳电子技术,2007,44(2):106-110. 被引量:5
  • 2OKUMURA H,MISAWA S,YOSHIDA S.Determination of the conduction-band discontinuities of GaAs/AlxGa1-x As interfaces by capacitance-voltage measurements[J].Appl Phys Lett,1985,46(4):377-379.
  • 3LEE J B,KIM K S,CHOE B D.Observation of staggered band lineup in In0.5 Ga0.5P/Al0.43 Ga0.57 As heterojunction grown by liquid phase expilaxy[J].APL,1993,62(21):2688-2690.
  • 4BASARAN E,PARRY C P,KUBIAK R A.Electronchemical capatitance-voltage depth profiling of heavily boron-doped silicon[J].Crystal Growth,1995,157(5):109.
  • 5GORDON B J.C-V plotting,myths and methods[J].Solid State Technology,1993 (1):57-61.

二级参考文献15

  • 1DAVIS G J,KERR T,TUPPEN C G,et al.The growth and characterisation of nominally undoped AlInAs grown by molecular beam epitaxy[J].J Vac Sci Technol,1984 (B2):219-223.
  • 2BLOOD P.Capacitance-voltage profiling and the characterisation of Ⅲ-Ⅴ semiconductors using electrolyte barriers[J].Sernicond Sci Technol,1986 (1):7-27.
  • 3KINDER R,NEMCSICS A,HARMAN R,et al.Carrier profiling of a heterojunction bipolar transistor and p-i-n photodiode structures by electrochemical C-V technique[J].Phys Stat Sol (a),1999 (175):631-635.
  • 4UDHAYASANKARA M,KUMARA J.Chemical beam epitaxial growth of AlInAs and investigations of electrolytes for ECV profiling[J].Journal of Crystal Growth,2004 (268):389-395.
  • 5KANIEWSKA M,SLOMKS I.C-V profiling of GaAs using electrolyte barriers[J].Cryst Res Technol,2001 (36):1113-1118.
  • 6SEABAUGH A C,FRENSLEY W R,MATYI R J.Electrochemical C-V profiling of heterojunction device structures[J].IEEE Trans Electron Devices,1989 (36):309-313.
  • 7FAUR M,FAUR M,FLOOD D J,et al.Electrolyte for electrochemical C-V profiling of InP-and GaAs-based structures[J].Mat Sci Eng,1994 (B28):361-363.
  • 8UDHAYASANKAR M,KUMAR J,RAMASAMY P.Investigations of beryllium in CBE grown epitaxial layers and profiling of multilayers by electro-chemical C-V measurements[J]Materials Chemistry and Physics,1999 (59):63-68.
  • 9BROWN A S,BHATTACHARYA P K,SEN S,et al.Dependence of AlInAs Schottky diode properties on molecular beam epitaxial growth temperature[J].App Phys Lett,1996 (68):220-222.
  • 10BASARAN E,PARRY C P,KUBIAK R A,et al.Electrochemical capacitance-voltage depth profiling of heavily borondoped silicon[J].J Crystal Growth,1995 (157):109-112.

共引文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部