α-SiN:H薄膜的光学声子与VO_2基Mott相变场效应晶体管的红外吸收特性

Infrared absorption of VO_2 based Mott transition field effect transistor dependent on optical phonon in α-SiN:H films

从器件构成材料中α-SiN:H,VO2,Al薄膜介电常数弥散特性的Lorentz多谐振模型出发,研究了器件在金属表面等离子体与VO2,特别是α-SiN:H薄膜光学声子共同作用下的红外吸收特性;得到了在不同的光谱范围器件的红外吸收特性随着α-SiN:H钝化层几何厚度的变化关系,与中心工作波长10μm对应的且经过位相修正以后钝化层的几何厚度为λ/4n时的红外吸收光谱、以及VO2的相变对吸收光谱的影响.

VO2 based Mott transition field effect transistor is a new element to be incorporated between microbolometer sensitive pixels and on-chip read-out circuitry to fully realize the planar integrated infrared focal plane array. Based on their dielectric dispersions in Lorentz model, its infrared absorption was studied by the theory of reflection from Al surface plasma and absorption by optical phonons in VO2 and especially in α-SiN： H films. The present paper reports on the properties of the absorption in different wavelength regions and the dependence on the thickness of the nitride passivation layer, the absorbance spectra for the layer with thickness of λ/4n after the phase delay is corrected, and the changes in the spectra caused by the transition in the VO2 film.