一种新型GaN基肖特基结构紫外探测器

A new Schottky barrier structure of GaN-based ultraviolet photodetector

提出了一种新型GaN基肖特基结构紫外探测器.该结构在常规的GaN肖特基结构紫外探测器上外加了一层禁带宽度更大的n型AlGaN层,模拟计算结果表明:与常规器件结构相比,该结构能有效地减小表面复合的影响,提高了器件的量子效率.进一步地研究结果还表明:采取较薄、载流子浓度较高的AlGaN层更有利于提高这种新结构器件的量子效率.

A new GaN-based ultraviolet photodetector with Schottky barrior structure is proposed. Comparied with the conventional i-GaN/n^＋-GaN structure,there is an additional thin n-AlGaN cap layer on the i-GaN in the new structure. The simulation result demonstrates that the new structure leads to an increased quantum efficiency in GaN photodetection,since the negative effect of surface states on the photodetector is reduced in the new structure. In addition,it is suggested that the performance of device with the new structure could be further improved by employing an even thinner AlGaN cap layer with higher carrier concentration.