电荷耦合器件辐射效应理论分析与模拟试验方法研究

Mechanism Analysis and Experiment Simulation on Radiation Effects of CCDs

分析了CCD电离效应和位移损伤机理,建立了一种国产埋沟CCD器件物理模型,实现了CCD信号电荷动态转移过程的数值模拟,计算了1MeV1、4MeV中子引起的CCD电荷转移效率的变化规律.建立了线阵CCD辐照效应离线测量系统,实现了CCD辐射敏感参数测试.利用Co-60γ源和反应堆脉冲中子,开展了商用器件总剂量和中子位移损伤效应模拟试验,在不同辐照条件下,给出了暗电流信号、饱和电压信号、电荷转移效率以及像元不均匀性的变化情况.

It is analyzed about the damage mechanism of ionization and displacement radiation on CCDs, The physical model and the numerical processing method are set up about a buried channel CC7）, which has been used to simulate the dynamic transfer process of CC7） with the three phrases pulse driver by semiconductor device simulator MEDICI. It is also calculated on the charge transfer efficiency of CCDs irradiated by 1MeV and 14MeV neutrons.An offline measure system is designed for radiation damage effects on linear CCDs based on CPLD. The experiments of ionization and displacement radiation effects are carried out on the commercial linear CC73 by Co-60γ source and neutron pulse from Xi＇an Pulse Reaction with our serf-designed test system,and get some valuable results of dark voltage and saturation voltage and charge transfer efficiency and cells inequality varied with total dose and neutron fluence for the devices.