SiC衬底金刚石薄膜的制备与性能表征

Fabrication and characterization of diamond films on SiC substrate

用热丝CVD法,以丙酮和氢气为碳源,在SiC衬底上沉积金刚石薄膜,提出了分步变参数沉积法制备超细晶粒金刚石复合薄膜的新工艺。结果表明,合理控制工艺条件的新工艺,对金刚石薄膜质量、形貌和粗糙度、薄膜与衬底间的附着力以及薄膜的摩擦系数有显著影响,金刚石薄膜的平均晶粒尺寸从3μm减小到0.3μm,拉曼特征峰显示超细晶粒金刚石薄膜特征,涂层附着力好,超细晶粒金刚石薄膜的表面粗糙度和摩擦系数值显著下降,对获取实用化的S iC在基体上沉积高附着强度、低粗糙度金刚石薄膜的新技术具有重要的意义。

The diamond thin films are deposited on SiC substrates using acetone and hydrogen as the gas source by hot filament chemical vapor deposition （ HFCVD ）. A new technical method is proposed to deposit fine-grained diamond thin films by the intermittent deposition with alternative deposition parameters. The results show that the new process for appropriately controlling deposition conditions affects greatly the surface roughness, morphology, chemical quality, adhesion strength and friction coefficient of the diamond film. The average grain size of the diamond films decreases from 3 to 0.3 μm. The Raman structure exhibits the feature of fine-grained diamond films. The smooth fine-grained diamond coatings display good adhesion and the surface roughness and friction coefficient were reduced obviously. It is of great significance for practical application of the new technology of depositing diamond thin films with low surface roughness and high adhesion strength on SiC substrates.